Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition

被引:2
|
作者
Jee, Seung Hyun [1 ,2 ]
Kim, Jun Hwan [3 ]
Baek, Jong Hyuk [3 ]
Kim, Dong-Joo [2 ]
Kang, Seong Sik [4 ]
Yoon, Young Soo [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Auburn Univ, Dept Mech Engn, Mat Res & Educ Ctr, Auburn, AL 36849 USA
[3] Korea Atom Energy Res Inst, Recycled Fuel Dev Div, Taejon 305600, South Korea
[4] Korea Inst Nucl Safety, Regulatory Res Div, Taejon 305338, South Korea
基金
新加坡国家研究基金会;
关键词
Fuel-clad chemical interaction; Metalorganic chemical vapor deposition; Zirconium oxynitride; Thin films; Auger photoelectron spectroscopy; Scanning electron microscopy; PU-ZR FUEL; DIFFUSION-BARRIERS; PERFORMANCE; BEHAVIOR; ALLOY;
D O I
10.1016/j.tsf.2012.03.096
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A zirconium oxynitride (ZON) thin film was deposited onto HT9 steel as a cladding material by a metalorganic chemical vapor deposition (MOCVD) in order to prevent a fuel-clad chemical interaction (FCCI) between a U-10 wt% Zr metal fuel and a clad material. X-ray diffraction spectrums indicated that the mixture of structures of zirconium nitride, oxide and carbide in the MOCVD grown ZON thin films. Also, typical equiaxial grain structures were found in plane and cross sectional images of the as-deposited ZON thin films with a thickness range of 250-500 nm. A depth profile using auger electron microscopy revealed that carbon and oxygen atoms were decreased in the ZON thin film deposited with hydrogen gas flow. Diffusion couple tests at 800 degrees C for 25 hours showed that the as-deposited ZON thin films had low carbon and oxygen content, confirmed by the Energy Dispersive X-ray Spectroscopy, which showed a barrier behavior for FCCI between the metal fuel and the clad. This result suggested that ZON thin film cladding by MOCVD, even with the thickness below the micrometer level, has a high possibility as an effective FCCI barrier. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:5340 / 5345
页数:6
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