PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II
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2001年
/
87卷
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We studied the excitation-energy dependence for Rai nan scattering on the GaAs optical phonon modes in an InAs/GaAs heterostructure. The GaAs LO phonon scattering exhibits a resonance with the InAs optical transitions, the Raman profiles depending on the polarization of the incoming light. We interpret our results as due to incoming resonance with E1-HH 1 and the E1-LH 1 transition of the monolayer. In addition, we demonstrate that the scattering intensity is influenced by an inhomogeneous exciton linewidth due to fluctuations in the well width.