Effect of UV Irradiation on Modification and Subsequent Wet Removal of Model and Post-Etch Fluorocarbon Residues

被引：25

作者：

Le, Q. T. ^{[1
]}

de Marneffe, J. -F. ^{[1
]}

Conard, T. ^{[1
]}

Vaesen, I. ^{[1
]}

Struyf, H. ^{[1
]}

Vereecke, G. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 03期

关键词：

PLASMA POLYMERIZATION; PHOTORESIST; FILMS; MIXTURES;

D O I：

10.1149/2.008203jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Fluorocarbon polymer deposited on a checkerboard wafer composed of low-k dielectrics and TiN dies (2x2 cm squares) was used as a model polymer for wet removal experiments. The model polymer and the polymer residues generated on sidewalls of patterned dielectric structure were characterized using ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and angle-resolved X-ray photoelectron spectroscopy, respectively. Both types of samples showed that while wet cleans using a mixture of dimethylsulfoxide and monoethanolamine or a commercial solvent mixture only removed partially the polymer, a short irradiation of the polymer with UV (lambda similar to 254 nm, dose >= 3 J/cm(2)) followed by an immersion in the same solvent mixture led to substantial improvement of polymer removal. Mechanisms of modification of the polymer structure under the effect of UV radiation have been proposed. The improvement of removal was explained by a mechanism involving chain scissioning of the polymer backbone under UV irradiation. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.008203jes] All rights reserved.

引用

页码：H208 / H213

页数：6

共 33 条

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