Scanning capacitance microscopy of semiconductor materials

被引：0

作者：

Raineri, V

Giannazzo, F

机构：

[1] CNR, IMETEM, IT-95121 Catania, Italy

[2] INFM, Dipartimento Fis, IT-95129 Catania, Italy

来源：

BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000 | 2000年 / 78-79卷

关键词：

carrier profiling; scanning capacitance microscopy; two-dimensional characterisation;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning capacitance microscopy is a powerful technique to determine carrier distribution in semiconductors with high sensitivity ( 10(14) - 10(20) cm(-3)). We demonstrate that its spatial resolution (nearly 10 nm) can be improved in the two dimensions (depth and lateral) by double angle bevelling the sample. In this paper sample preparation, measurement method and carrier profiling are carefully described and some examples of applications to materials and Si devices are given.

引用

页码：425 / 432

页数：8

共 7 条

[1]

Anand S, 1999, INST PHYS CONF SER, P629

[2]

BOWALLIUS O, 2001, IN PRESS MAT SCI JAN

[3]

DEWOLF P, 2001, IN PRESS MAT SCI JAN

[4] High-resolution scanning capacitance microscopy of silicon devices by surface beveling [J].