Nanosecond Field-Induced Quenching of the Luminescence from Er-Doped Silicon Nanocrystals

被引:0
作者
Liu, H. X. [1 ]
Meng, F. J. [1 ]
Sun, J. M. [1 ]
机构
[1] Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China
关键词
Er-Doped Silicon Nanocrystals; Field-Induced Quenching; Stark Effect; Exciton Ionization; Photoluminescence; 1.54; MU-M; SI NANOCRYSTALS; ENERGY-TRANSFER; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; EXCITATION; SIO2-FILMS; MECHANISM; IONS;
D O I
10.1166/jnn.2011.5283
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Er-doped Si-rich SiO2 gate oxide layers containing silicon nanocrystals are prepared by implantation of Si+ and Er+ into SiO2 thin films. The photoluminescence from both Si nanocrystals around 700-850 nm and Er3+ ions at 1.54 mu m is strongly quenched by applying electric field in the Si-rich oxide layer. The quenching time and the recovery time of the photoluminescence from Si nanocrystals are less than 50 ns under pulsed field modulation. The quenching rate of the luminescence increases with increasing the density and reducing the size of the silicon nanocrystals. Our results indicate that the fast quenching process originates from the quantum confined Stark effect and enhanced exciton ionization by carrier tunneling between the silicon nanocrystals under the high electric field.
引用
收藏
页码:9942 / 9945
页数:4
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