In-situ measurement of temperature variation in Si wafer during millisecond rapid thermal annealing induced by thermal plasma jet irradiation

被引：18
|
作者：
Furukawa, Hirokazu [1 ]
Higashi, Seiichiro [1 ]
Okada, Tatsuya [1 ]
Kaku, Hirotaka [1 ]
Murakami, Hideki [1 ]
Miyazaki, Seiichi [1 ]
机构：
[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Intergrat Sci, Hiroshima 7398530, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期
关键词：
in-situ measurement; temperature measurement; Si wafer; RTA; millisecond time resolution;
D O I：
10.1143/JJAP.47.2460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An in-situ measurement technique for the temperature profile of a Si wafer during millisecond rapid thermal annealing has been developed. By analyzing the oscillation observed in transient reflectivity of the Si wafer during annealing, we obtain a transient temperature profile with a millisecond time resolution. Since this measurement is based on optical interference, a highly sensitive temperature measurement with an accuracy of 2K is expected. Using this measurement technique, we controlled Si wafer surface temperature during thermal plasma jet irradiation with the heating and cooling rates in the order of 10(4)-10(5)K/s.
引用
收藏
页码：2460 / 2463
页数：4
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