Room-temperature coulomb oscillations of carbon nanotube field-effect transistors with oxidized insulators

被引：6

作者：

Ohno, Yasuhide ^{[1
]}

Asai, Yoshihiro ^{[1
]}

Maehashi, Kenzo ^{[1
]}

Inoue, Koichi ^{[1
]}

Matsumoto, Kazuhiko ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

carbon nanotube; field-effect transistor; Coulomb oscillation; single-electron transistor;

D O I：

10.1143/JJAP.47.2056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon nanotube field-effect transistors (CNT-FETs) with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. A thin tunnel barrier layer, which was an oxidized aluminum layer, was inserted between nanotube channels and electrodes. Gate voltage dependences of the drain current were measured at 290 K. Clear Coulomb oscillations could be observed for the sample with the tunnel barrier layer, while only conventional ambipolar characteristics of conventional CNT-FETs could be observed for the sample without tunnel barrier layer. These SET operations showed good reappearance. These results indicate that the insertion of the thin tunnel barrier layer is very effective for realizing SET operations at room temperature.

引用

页码：2056 / 2059

页数：4

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