Synthesis of aluminum oxide nanostructures on the silicon surface

被引：1

作者：

Potapov, VK ^{[1
]}

Matyuk, VM ^{[1
]}

Trakhtenberg, LI ^{[1
]}

机构：

[1] LY Karpov Phys Chem Res Inst, State Sci Ctr, Moscow 103064, Russia

来源：

HIGH ENERGY CHEMISTRY | 2005年 / 39卷 / 05期

关键词：

D O I：

10.1007/s10733-005-0065-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Data on the synthesis of aluminum oxide nanostructures on the silicon surface by the oxidation of atomic aluminum layers with a high-frequency inductively coupled oxygen discharge plasma are reported. The conditions for the formation and the properties of aluminum oxide nanolayers were determined. It was found that this method affords oxide films with uniform structure and composition.

引用

页码：330 / 332

页数：3

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