Sputtered AZO Thin Films for TCO and Back Reflector Applications in Improving the Efficiency of Thin Film a-Si:H Solar Cells

被引：22
作者：
Rayerfrancis, Arokiyadoss [1 ,2 ]
Bhargav, P. Balaji [1 ,2 ]
Ahmed, Nafis [1 ,2 ]
Bhattacharya, Sekhar [1 ]
Chandra, Balaji [1 ]
Dhara, Sandip [3 ]
机构：
[1] SSN Coll Engn, SSN Res Ctr, Kalavakkam 603110, Tamil Nadu, India
[2] SSN Coll Engn, Dept Phys, Kalavakkam 603110, Tamil Nadu, India
[3] Indira Gandhi Ctr Atom Res, Surface & Nanosci Div, Kalpakkam 603102, Tamil Nadu, India
来源：
SILICON | 2017年 / 9卷 / 01期
关键词：
AZO; a-Si:H solar cell; Back reflector; Structural; Electrical; Optical properties; INDIUM TIN OXIDE; AMORPHOUS-SILICON; STRUCTURAL-PROPERTIES; ZNO;
D O I：
10.1007/s12633-015-9350-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the properties of Al doped ZnO (AZO) thin films on glass substrates and its effect on the efficiency of amorphous silicon (a-Si:H) solar cells as the back reflector. Oriented AZO thin films were grown using DC magnetron sputtering by varying Ar gas flow rates. The influence of Ar flow rate on the structural, electrical and optical properties of AZO thin films suitable for transparent conducting oxide (TCO) and back reflector applications was investigated. The (a-Si:H) solar cells, with and without AZO back reflector, were fabricated on FTO coated glass substrates using the PECVD technique. The solar cells were tested using a Sun simulator under AM 1.5 condition. Enhancement in current density from 12.46 to 14.24 mA/cm(2) with the AZO back reflector was observed, thereby increasing the efficiency of the solar cell from 6.38 to 7.82 %, respectively.
引用
收藏
页码：31 / 38
页数：8
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