Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT

被引：10

作者：

Panda, D. K. ^{[1
]}

Lenka, T. R. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Elect & Commun Engn, Microelect & VLSI Design Grp, Silchar 788010, Assam, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 112卷

关键词：

2DEG; GaN; High; -k; MOS-HEMT; TCAD; LOW-FREQUENCY NOISE; ALGAN/GAN HEMTS; TRANSISTORS;

D O I：

10.1016/j.spmi.2017.09.045

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is investigated for different gate insulators such as SiO2, Al2O3/Ga2O3/GdO3, HfO2/SiO2, La2O3/SiO2 and HfO2 with different trap densities by IFM based TCAD simulation. In order to analyze this an analytical model of drain current low frequency noise is developed. The model is developed by considering 2DEG carrier fluctuations, mobility fluctuations and the effects of 2DEG charge carrier fluctuations on the mobility. In the study of different gate insulators it is observed that carrier fluctuation is the dominant low frequency noise source and the non-uniform exponential distribution is critical to explain LFN behavior, so the analytical model is developed by considering uniform distribution of trap density. The model is validated with available experimental data from literature. The effect of total number of traps and gate length scaling on this low frequency noise due to different gate dielectrics is also investigated. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：374 / 382

页数：9

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