Advanced Electrochemical Machining (ECM) for tungsten surface micro-structuring in blanket applications

被引:12
作者
Holstein, Nils [1 ]
Krauss, Wolfgang [1 ]
Konys, Juergen [1 ]
Heuer, Simon [2 ]
Weber, Thomas [2 ]
机构
[1] Karlsruhe Inst Technol, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Baden Wurttembe, Germany
[2] Res Ctr Julich, Inst Energy & Climate Res Plasma Phys IEK 4, D-52425 Julich, Germany
关键词
First Wall; Electrochemical Machining; Plasma-spraying; Tungsten shaping; Blanket;
D O I
10.1016/j.fusengdes.2016.01.045
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Plasma facing components for fusion applications must have to exhibit long-term stability under extreme physical conditions, and therefore any material imperfections caused by mechanical and/or thermal stresses in the shaping processes cannot be tolerated due to a high risk of possible technical failures under fusion conditions. To avoid such defects, the method of Electrochemical Machining (ECM) enables a complete defect-free processing of removal of tungsten material during the desired shaping, also for high penetration depths. Furthermore, supported by lithographic mask pretreatment, three-dimensional distinct geometric structures can be positive-imaged via the directional galvanic dissolution applying M-ECM process into the tungsten bulk material. New required applications for tungsten components, e.g. as adhesion promotors in W-surfaces to enable sure grip and bonding of thick plasma-spraying layers for blanket components, will define the way of further miniaturization of well-established millimeter dimensioned M-ECM shaping processes to dimensions of 100 mu m and furthermore down to 50 pm. Besides current M-ECM limits the article describes inevitable needs of further developments for mask resists, mask materials and the resulting ECM parameters, to reach the needed accuracy in tungsten microstructure. The achieved progress and observed correlations of processing parameters will be manifested by produced demonstrators made by the new "mu M"-ECM process. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:956 / 960
页数:5
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