Deposition of polycrystalline SiGe by surface wave excited plasma

被引：5

作者：

Takanishi, Y. ^{[1
]}

Okayasu, I. ^{[2
]}

Toyoda, H. ^{[3
]}

Sugai, H. ^{[2
,3
]}

机构：

[1] Nagoya Univ, Dept Energy Engn & Sci, Nagoya, Aichi 4648601, Japan

[2] Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648601, Japan

[3] Nagoya Univ, Plasma Nanotechnol Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 11期

基金：

日本科学技术振兴机构;

关键词：

plasma CVD; polycrystalline silicon germanium; surface wave plasma; grain size;

D O I：

10.1016/j.tsf.2007.08.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With application to underlayer of strained Si film in mind, polycrystalline SiGe films were deposited by plasma chemical vapor deposition (PCVD) using a high-density surface wave-excited plasma in SiH4/GeH4/H-2 gas. The atomic ratio of Si/Ge in the film was controlled by adjusting the gas flow rate ratio of SiH4/GeH4. The lattice spacing of the film was also controlled by the gas flow rate ratio. Polycrystalline SiGe film with large grain size of similar to 200 nm and high crystallinity was successfully deposited by surface wave-excited plasma. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：3554 / 3557

页数：4

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