The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics

被引：38

作者：

Wang, X. J. ^{[1
]}

Zhang, L. D. ^{[1
]}

Liu, M. ^{[1
]}

Zhang, J. P. ^{[1
]}

He, G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2903097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of N concentration on the band gap and band offsets of HfO(x)N(y) films has been systematically investigated. It was found that the band gap as well as the band offsets of HfO(x)N(y) films decreased with the increase of N concentration. When the N concentration reached 16.3%, the conduction band offset (Delta E(c)) reduced to be 0.88 eV, which is smaller than the minimal requirement of Delta E(c) values for high-k dielectrics and, thus, leads to unacceptably high leakage currents. Therefore, nitrogen concentration should be carefully controlled to guarantee excellent properties of nitrogen incorporated high-k dielectrics. (C) 2008 American Institute of Physics.

引用

页数：3

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