Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Heterostructures with an active region containing a Ga(0.59)In(0.41)As quantum well located between GaAs(1 - y) P (y) compensating layers were studied using photoluminescence spectroscopy. It was shown that an increase in the phosphorus content in compensating layers makes it possible to obtain unrelaxed heterostructures with wider Ga(0.59)In(0.41)As quantum wells. On the basis of photoluminescence studies, the parameters of such a composite active region were chosen with a view to attaining the longest lasing wavelength possible. Laser heterostructures with a composite active region consisting of a highly strained Ga(0.59)In(0.41)As quantum well located between GaAs(0.85)P(0.15) compensating layers were grown on GaAs substrates by metalloorganic chemical vapor deposition. Stripe mesa-structure laser diodes of 100-mu m aperture emitting at 1220 nm were fabricated. The highest emission power of these laser diodes in the continuous-wave regime amounted to 2 W per output mirror.