A new ISFET sensor interface circuit

被引：0

作者：

Palán, B ^{[1
]}

dos Santos, FV ^{[1
]}

Karam, JM ^{[1
]}

Courtois, B ^{[1
]}

Husák, M ^{[1
]}

机构：

[1] TIMA Lab, F-38031 Grenoble, France

来源：

EUROSENSORS XII, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents a new ISFET sensor interface circuit designed in the frame of the BARMINT ESPRIT IV project. A differential configuration with two ISFET devices (one with Si3N4 sensitive layer, the other with SiO2) is monolithically realized in a 2.5 mu m CMOS technology. The sensor interface is simple, has low silicon area requirements and has a current output analog signal.

引用

页码：171 / 174

页数：4

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