A new analytical model for high frequency MOSFET noise

被引：2

作者：

Guerrieri, SD ^{[1
]}

Bonani, F ^{[1
]}

Ghione, G ^{[1
]}

Alam, MA ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy

来源：

PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2001年

关键词：

D O I：

10.1109/CICC.2001.929807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical physics-based 2D noise simulations. The analytical formulation accounts for drain and gate noise spectra and their correlation, and extends the classical van der Ziel approach to short channel devices. The field dependency of the diffusivity is shown to affect the noise performances significantly in short-gate devices. The new model is well suited to be exploited in circuit simulation in conjunction with compact models such as BSIM4.

引用

页码：389 / 392

页数：4

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