A new analytical model for high frequency MOSFET noise

被引：2

作者：

Guerrieri, SD ^{[1
]}

Bonani, F ^{[1
]}

Ghione, G ^{[1
]}

Alam, MA ^{[1
]}

机构：

[1] Politecn Torino, Dipartimento Elettron, I-10129 Turin, Italy

来源：

PROCEEDINGS OF THE IEEE 2001 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2001年

关键词：

D O I：

10.1109/CICC.2001.929807

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analytical approach to extract high frequency MOSFET noise is presented and its validation is carried out with careful comparison with numerical physics-based 2D noise simulations. The analytical formulation accounts for drain and gate noise spectra and their correlation, and extends the classical van der Ziel approach to short channel devices. The field dependency of the diffusivity is shown to affect the noise performances significantly in short-gate devices. The new model is well suited to be exploited in circuit simulation in conjunction with compact models such as BSIM4.

引用

页码：389 / 392

页数：4

共 50 条

[21] New high order continuous MOSFET model
Zhang, Wenliang
Yang, Zhilian
Tien Tzu Hsueh Pao/Acta Electronica Sinica, 1998, 26 (08): : 114 - 116
[22] A new analytical and scaleable noise model for HFET
Reuter, R
Tegude, FJ
1998 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1998, : 137 - 140
[23] High frequency thermal noise modelling of short-channel MOSFET's
Signoracci, L
Turchetti, C
Orcioni, S
SOLID-STATE ELECTRONICS, 2001, 45 (02) : 205 - 221
[24] The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise
Yeh, Kuo-Liang
Ku, Chih-You
Guo, Jyh-Chyurn
2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 577 - 580
[25] Analytical noise model of a high-electron-mobility transistor for microwave-frequency application
Guru, V
Vyas, HP
Gupta, M
Gupta, RS
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2004, 40 (05) : 410 - 417
[26] High-frequency compact analytical noise model of gate-all-around MOSFETs
Lazaro, A.
Nae, B.
Muthupandian, C.
Iniguez, B.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (03)
[27] High-frequency electron transport in a model ballistic MOSFET
Horák, M
ASDAM 2004: THE FIFTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2004, : 219 - 222
[28] MOSFET low frequency noise prediction and control
Cheung, Kin P.
Southwick, Richard G., III
Campbell, Jason P.
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 531 - 534
[29] A new threshold voltage analytical model of strained Si/SiGe MOSFET
Lukic, P. M.
Ramovic, R. M.
Sasic, R. M.
2006 25TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2006, : 505 - +
[30] A new analytical subthreshold model of SRG MOSFET with analogue performance investigation
Sarkar, Angsuman
De, Swapnadip
Dey, Anup
Sarkar, Chandan Kumar
INTERNATIONAL JOURNAL OF ELECTRONICS, 2012, 99 (02) : 267 - 283

← 1 2 3 4 5 →