On the Low-Frequency Noise of High-κ Gate Stacks: What Did We Learn?

被引：0
|
作者：
Simoen, Eddy [1 ,2 ]
Ritzenthaler, Romain [1 ]
Schram, Tom [1 ]
Arimura, Hiroaki [1 ]
Horiguchi, Naoto [1 ]
Claeys, Cor [3 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Univ Ghent, Dept Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium
[3] Katholieke Univ Leuven, EE Dept, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
关键词：
IMPACT; LAYER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-kappa/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps.
引用
收藏
页码：97 / 100
页数：4
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