Time resolved study of laser diode characteristics during pulsed operation

被引:20
作者
Eichler, C [1 ]
Schad, SS [1 ]
Seyboth, M [1 ]
Habel, F [1 ]
Scherer, M [1 ]
Miller, S [1 ]
Weimar, A [1 ]
Lell, A [1 ]
Härle, V [1 ]
Hofstetter, D [1 ]
机构
[1] Univ Ulm, Optoelect Dept, D-89069 Ulm, Germany
来源
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词
D O I
10.1002/pssc.200303296
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Under pulsed operation, time dependent spectral and electro-optical measurements on GaN-based laser diodes show a considerable red shift in the emission wavelength and a decreasing voltage drop across the device. These changes appear on a rather short time scale in the microsecond range. During a 3.7 microsecond long pulse, a temperature increase of approximately 50 K is obtained using different experimental methods. This value agrees well with numerical simulations based on the thermal properties of the material. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2283 / 2286
页数:4
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