Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers

被引：35
作者：
Esquivias, I [1 ]
Weisser, S
Romero, B
Ralston, JD
Rosenzweig, J
机构：
[1] Univ Politecn Madrid, Dept Tecnol Foton, Ciudad Univ, E-28040 Madrid, Spain
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 04期
关键词：
equivalent circuit; gallium compounds; impedance measurement; laser measurements; quantum-well lasers; semiconductor lasers;
D O I：
10.1109/3.753669
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the effects of carrier capture and re-emission on the electrical impedance, equivalent circuit, and modulation response of quantum-well (QW) laser diodes. The electrical impedance is shown to be a sensitive function of the time constants associated with carrier capture/transport and carrier re-emission. We compare the theoretical results with measured values of the electrical impedance of high-speed InGaAs-GaAs multiple-quantum-well lasers fabricated using different epilayer structures with a common lateral structure. The experimental results agree well with the theoretical model, allowing us to extract the effective carrier escape time and the effective carrier lifetime in the QW's, and to estimate the effective carrier capture/transport time.
引用
收藏
页码：635 / 646
页数：12
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