Why the dielectric tunability is maximal in dielectrics near the cubic-tetragonal phase transformation point is still unknown, although it is well accepted for tunable dielectrics till now. Here, we report dielectric tunability following a typical (100) oriented PbxSr1-xTiO3 (PST) thin film with different Pb/Sr ratio. The (100) PST thin films were prepared by sol-gel method on the terbium doped lead titanate (2% Tb-PbTiO3) inducing layer. They are tensile strained and the spontaneous polarizations (dipoles) are along the in-plain direction. Driven by the vertical DC bias, the dipoles in the (100) PST will be possibly rotated to the direction along DC bias and thus tunable permittivity appears. All these thin films show high dielectric tunability over 50%, in which the PST45(Pb0.45Sr0.55TiO3) exhibits the highest one. In this paper, the tunability is found controlled coordinately by both the anisotropy of the perovskite phase and the activation of dipole rotation. It increases with increasing the anisotropy when Pb increases based on the enlarging difference in permittivity along a and c directions, while it decreases with increasing the activation energy based on uneasy rotation of dipoles under DC bias. That is why, high dielectric tunability always exists near the cubic-tetragonal phase transformation; at this point, the activation energy is not so high and the permittivity difference keeps still a little significant. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671645]
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chow, Simon Ching-kin
;
Lo, Veng-cheong
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
;
Nothwang, WD
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
;
Hubbard, C
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
;
Ngo, E
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
;
Ervin, M
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Dong, Guixia
;
Ma, Shuwang
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Ma, Shuwang
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Du, Jun
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Du, Jun
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Cui, Jiandong
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Du, PY
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Tang, LW
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Tang, LW
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Zhao, XH
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, XH
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Weng, WJ
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Weng, WJ
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Han, GR
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Chung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South Korea
Kim, KT
;
Kim, CI
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Chung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South Korea
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chow, Simon Ching-kin
;
Lo, Veng-cheong
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
机构:
USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Cole, MW
;
Nothwang, WD
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Nothwang, WD
;
Hubbard, C
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Hubbard, C
;
Ngo, E
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
Ngo, E
;
Ervin, M
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USA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USAUSA, Res Lab, Weap & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
机构:
Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Dong, Guixia
;
Ma, Shuwang
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Ma, Shuwang
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Du, Jun
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
Du, Jun
;
Cui, Jiandong
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Gen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R ChinaGen Res Inst NonFerrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Du, PY
;
Tang, LW
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Tang, LW
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Zhao, XH
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Zhao, XH
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Weng, WJ
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Weng, WJ
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Han, GR
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
机构:
Chung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South Korea
Kim, KT
;
Kim, CI
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Chung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South KoreaChung Ang Univ, Sch Elect & Elect Engn, Dongjak Gu, Seoul 156756, South Korea