Large spin diffusion length in an amorphous organic semiconductor

被引：186

作者：

Shim, J. H. ^{[1
]}

Raman, K. V. ^{[1
]}

Park, Y. J. ^{[1
,2
]}

Santos, T. S. ^{[1
]}

Miao, G. X. ^{[1
]}

Satpati, B. ^{[3
]}

Moodera, J. S. ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

[2] Korea Inst Sci & Technol, Nanodevice Res Ctr, Seoul, South Korea

[3] Paul Drude Inst Solid State Elect, Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.100.226603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We directly measured a spin diffusion length (lambda(s)) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, lambda(s) in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for organic spintronics development.

引用

页数：4