Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization

被引：7

作者：

Ishihara, Ryoichi ^{[1
]}

Rana, Vikas ^{[1
]}

He, Ming ^{[1
]}

Hiroshima, Y. ^{[2
]}

Inoue, S. ^{[2
]}

Metselaar, Wim ^{[1
]}

Beenakker, Kees ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Elect Engn Math & Comp Sci, DIMES, NL-2600 GB Delft, Netherlands

[2] SEIKO EPSON Cooperat, Frontier Device Res Ctr, Nagano 3990293, Japan

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 03期

关键词：

A1 : crystal structure; A2 : czochralski method; A2 : growth from melt; B2 : semiconducting silicon;

D O I：

10.1016/j.sse.2007.10.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm(2)/V s. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 us was successfully obtained with a supply voltage of 8 V. (c) 2007 Elsevier Ltd. Ali rights reserved.

引用

页码：353 / 358

页数：6

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