Molecular beam epitaxy of thin HfTe2 semimetal films

被引：51

作者：

Aminalragia-Giamini, S. ^{[1
,2
]}

Marquez-Velasco, J. ^{[1
,3
]}

Tsipas, P. ^{[1
]}

Tsoutsou, D. ^{[1
]}

Renaud, G. ^{[4
,5
]}

Dimoulas, A. ^{[1
,5
,6
]}

机构：

[1] Natl Ctr Sci Res Demokritos, Patriarchou Grigoriou & Neapoleos 27, Athens 15310, Greece

[2] Univ Athens, Dept Phys, Sect Solid State Phys, GR-15684 Athens, Greece

[3] Natl Tech Univ Athens, Dept Phys, Heroon Polytech 9, GR-15780 Athens, Greece

[4] Univ Grenoble Alpes, F-38000 Grenoble, France

[5] CEA, INAC MEM, F-38000 Grenoble, France

[6] Univ Grenoble Alpes, Chair Excellence, F-38000 Grenoble, France

来源：

2D MATERIALS | 2017年 / 4卷 / 01期

关键词：

hafnium ditelluride; semimetal; MBE; 2D material; TOPOLOGICAL DIRAC SEMIMETAL; ELECTRONIC-PROPERTIES; PHASE-TRANSITION; MX3; M; DISCOVERY; STATE; ZR; TE; SE; TI;

D O I：

10.1088/2053-1583/4/1/015001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal.

引用

页数：9

共 35 条

[1] Structural and electronic properties of MX3 (M = Ti, Zr and Hf; X = S, Se, Te) from first principles calculations [J].

Abdulsalam, Mahmud ;

Joubert, Daniel P. .

EUROPEAN PHYSICAL JOURNAL B, 2015, 88 (07) :1-11

[2]

[Anonymous], 2016, ARXIV160402116

[3] Recent Advances in Two-Dimensional Materials beyond Graphene [J].

Bhimanapati, Ganesh R. ;

Lin, Zhong ;

Meunier, Vincent ;

Jung, Yeonwoong ;

Cha, Judy ;

Das, Saptarshi ;

Xiao, Di ;

Son, Youngwoo ;

Strano, Michael S. ;

Cooper, Valentino R. ;

Liang, Liangbo ;

Louie, Steven G. ;

Ringe, Emilie ;

Zhou, Wu ;

Kim, Steve S. ;

Naik, Rajesh R. ;

Sumpter, Bobby G. ;

Terrones, Humberto ;

Xia, Fengnian ;

Wang, Yeliang ;

Zhu, Jun ;

Akinwande, Deji ;

Alem, Nasim ;

Schuller, Jon A. ;

Schaak, Raymond E. ;

Terrones, Mauricio ;

Robinson, Joshua A. .

ACS NANO, 2015, 9 (12) :11509-11539

[4] The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV-CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires [J].

Cantelli, V. ;

Geaymond, O. ;

Ulrich, O. ;

Zhou, T. ;

Blanc, N. ;

Renaud, G. .

JOURNAL OF SYNCHROTRON RADIATION, 2015, 22 :688-700

[5] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[6]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[7] LOW-TEMPERATURE STRUCTURAL PHASE-TRANSITION IN BETA-MOTE2 [J].

CLARKE, R ;

MARSEGLIA, E ;

HUGHES, HP .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (02) :121-126

[8]

Deng K, 2016, NAT PHYS, P1745

[9] CRYSTAL-STRUCTURE OF HFTE5 [J].

FURUSETH, S ;

BRATTAS, L ;

KJEKSHUS, A .

ACTA CHEMICA SCANDINAVICA, 1973, 27 (07) :2367-2374

[10] A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu [J].

Grimme, Stefan ;

Antony, Jens ;

Ehrlich, Stephan ;

Krieg, Helge .

JOURNAL OF CHEMICAL PHYSICS, 2010, 132 (15)

← 1 2 3 4 →