Pressure induced optical absorption and refractive index changes of a shallow hydrogenic impurity in a quantum wire

被引：26

作者：

Arunachalam, N. ^{[2
]}

Peter, A. John ^{[1
]}

Lee, Chang Woo ^{[3
,4
]}

机构：

[1] Govt Arts Coll, Dept Phys, Madurai 625106, Tamil Nadu, India

[2] Govt Higher Secondary Sch, Dept Phys, Madurai 625109, Tamil Nadu, India

[3] Kyung Hee Univ, Coll Engn, Dept Chem Engn, Yongin 446701, Gyeonggi, South Korea

[4] Kyung Hee Univ, Coll Engn, Green Energy Ctr, Yongin 446701, Gyeonggi, South Korea

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2011年 / 44卷 / 01期

关键词：

HYDROSTATIC-PRESSURE; DONOR IMPURITIES; COEFFICIENTS; DOTS;

D O I：

10.1016/j.physe.2011.08.019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pressure induced binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is investigated. Calculations are performed using Bessel functions as an orthonormal basis within a single band effective mass approximation using variational method. Photoionization cross-section of the hydrogenic impurity in the influence of pressure is studied. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of pressure are analyzed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and pressure. The occurred blue shift of the resonant peak due to the pressure gives the information about the variation of two energy levels in the quantum well wire. The optical absorption coefficients and the refractive index changes are strongly dependent on the incident optical intensity and the pressure. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：222 / 228

页数：7

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