Thermal effects in HBT emitter resistance extraction

被引：12

作者：

Hanington, G ^{[1
]}

Chang, CE ^{[1
]}

Zampardi, PJ ^{[1
]}

Asbeck, PM ^{[1
]}

机构：

[1] ROCKWELL INT SCI CTR,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 16期

关键词：

heterojunction bipolar transistors; semiconductor device models;

D O I：

10.1049/el:19961017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that device self-heating effects introduce a significant error in the determination of emitter resistance in AlGaAs/GaAs HBTs by the common technique of extrapolating 1/g(m) against 1/I-c (where g(m) is the observed device transconductance). An approximate expression for the error is given, and an improved technique for R(e) extraction is presented.

引用

页码：1515 / 1516

页数：2