Photoelectric properties of Bi2Se3 films grown by thermal evaporation method

被引：12
作者：
Xiao, Liu [1 ]
Liu, Qiya [2 ]
Zhang, Min [1 ]
Liu, Ligang [1 ]
机构：
[1] China West Normal Univ, Coll Phys & Space Sci, Nanchong 637002, Sichuan, Peoples R China
[2] Southwest Jiaotong Univ, Surperconduct & New Energy R&D Ctr, Key Lab Adv Technol Mat, Minist Educ, Chengdu, Sichuan, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2020年 / 7卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Bi2Se3; films; electron microscopy; photoelectric properties; PEC solar cell; THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION;
D O I：
10.1088/2053-1591/ab692f
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Bi2Se3 films were prepared by thermal evaporation on different substrates (FTO, ITO and Glass). The structure and morphology are characterized by XRD and SEM. The optical band gap (E-g) is 1.47 eV, 1.54 eV, and 1.59 eV, respectively. The I-V and C-V curves have been obtained by a photoelectrochemical (PEC) cell system, and the results indicated the Bi2Se3 film is n-type semiconductor. The transient photocurrent response of Bi2Se3/FTO and Bi2Se3/ITO were measured to evaluate the application potential of Bi2Se3 films in solar cell. The above results indicated that the Bi2Se3 films have advantages in the application of solar cells.
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页数：7
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