LVDC SiC MOSFET Analog Electronic Fuse With Self-Adjusting Tripping Time Depending on overcurrent Condition

被引:11
作者
Marroqui, David [1 ]
Garrigos, Ausias [1 ]
Blanes, Jose M. [1 ]
机构
[1] Miguel Hernandez Univ, Dept Mat Sci Opt & Elect Technol, Elche 03202, Spain
关键词
Circuit breaker; dc distribution; eFuse; electronic fuse; LVdc; SiC MOSFET; STATE CIRCUIT-BREAKER;
D O I
10.1109/TIE.2021.3104606
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This article deals with the design of an electronic fuse for 380 V dc distribution systems. It has been devised for applications that require current limitation up to 3 A, so approximately 1.2 kW. To protect the main semiconductor against excessive energy dissipation, the tripping time, defined as the time that circuit operates in current-limitation mode, varies with the current fault magnitude, and eventually for very hard fault conditions, i.e., short-circuit, the circuit acts as a circuit-breaker avoiding current-limitation operation. Furthermore, thermal foldback characteristic, defined as the variation of current limitation setpoint with temperature, and tripping time variation with temperature are also considered. Mathematical analysis, circuit design, simulations, and experimental validation have been carried out using a SiC MOSFET as power semiconductor. Experimental results working under different conditions show an excellent performance.
引用
收藏
页码:8472 / 8480
页数:9
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