A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

被引:4
作者
De Gryse, O
Vanhellemont, J
Clauws, P
Lebedev, O
Van Landuyt, J
Simoen, E
Claeys, C
机构
[1] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium
[2] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
[3] IMEC, B-3001 Louvain, Belgium
[4] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium
关键词
spectral function; FTIR; silicon; silicon oxide; precipitate;
D O I
10.1016/j.physb.2003.09.194
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Infrared absorption spectra of composite precipitates are analysed with a modified Day-Thorpe algorithm, assuming a precipitated phase consisting of a mixture of two components with known optical properties. Additional constraints are introduced when solving the model equations by using a priori knowledge making the algorithm more reliable. It is shown that this novel approach allows determining both morphology and composition of precipitates. The method is applied to characterise oxide precipitates in boron-doped silicon. The results indicate that for the resistivity range above 60 mOmegacm, the precipitated phase is most probably SiO1.17+/-0.14, while for resistivities below 20 mOmega cm, precipitates consist of a SiO2/B2O3 composite with a large volume fraction of B(2)0(3) (up to 40% for 8 mOmegacm material). (C) 2003 Elsevier B.V. All rights reserved.
引用
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页码:1013 / 1017
页数:5
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