Multilevel Recording in Ge2Sb2Te5 Thin Films

被引：0
作者：
Fefelov, S. A. [1 ]
Kazakova, L. P. [1 ,2 ]
Bogoslovskiy, N. A. [1 ]
Bylev, A. B. [2 ]
Yakubov, A. O. [3 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg State Forest Tech Acad, St Petersburg 194021, Russia
[3] Natl Res Univ Elect Technol, Zelenograd 124498, Moscow Oblast, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 04期
关键词：
chalcogenide glassy semiconductors; switching effect; phase memory; current filament; multilevel recording; CURRENT-VOLTAGE CHARACTERISTICS; CURRENT FILAMENT; MEMORY;
D O I：
10.1134/S1063782620040065
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current-voltage characteristics measured on Ge2Sb2Te5 thin films in the current mode are studied. The effect of multilevel recording is established when applying sequential current pulses with increasing maxima. It is shown that this effect can be associated with memory-channel expansion. The memory-channel size is estimated. It is concluded that Ge2Sb2Te5 films can be used as memristors.
引用
收藏
页码：450 / 453
页数：4
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