Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

被引：6

作者：

Nikolskaya, A. A. ^{[1
]}

Korolev, D. S. ^{[1
]}

Mikhaylov, A. N. ^{[1
]}

Konakov, A. A. ^{[1
]}

Belov, A., I ^{[1
]}

Marychev, M. O. ^{[1
]}

Murtazin, R., I ^{[1
]}

Pavlov, D. A. ^{[1
]}

Tetelbaum, D., I ^{[1
]}

机构：

[1] Lobachevsky Univ, 23-3 Gagarin Ave, Nizhnii Novgorod 603950, Russia

来源：

SURFACE & COATINGS TECHNOLOGY | 2020年 / 386卷

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; SiO2/Si system; Ion irradiation; 9R-Si hexagonal phase; Photoluminescence; 1235 nm band; LIGHT-EMITTING STRUCTURES; HEXAGONAL SILICON; DEPENDENCE;

D O I：

10.1016/j.surfcoat.2020.125496

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The search of ways to improve light-emitting properties of silicon is of great importance for modern optoelectronics. In this work, the photoluminescence (PL) properties of the band at lambda = 1235 nm, which appears in silicon upon irradiation of the SiO2/Si system with Kr+ ions followed by annealing at 800 degrees C, have been studied. It is assumed that the source of PL is a 9R-Si hexagonal phase formed in Si substrate at the interface with SiO2 film. An interpretation is given for the established PL regularities that include the dependencies of PL band intensity on temperature and laser excitation power, as well as the temperature dependence of spectral position of the band maximum.

引用

页数：4

共 24 条

[1] Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy
Andreev, B
Chalkov, V
Gusev, O
Emel'yanov, A
Krasil'nik, Z
Kuznetsov, V
Pak, P
Shabanov, V
Shengurov, V
Shmagin, V
Sobolev, N
Stepikhova, M
Svetlov, S
[J]. NANOTECHNOLOGY, 2002, 13 (01) : 97 - 102
[2] PHOTOLUMINESCENCE STUDY OF RADIATIVE CHANNELS IN ION-IMPLANTED SILICON
AWADELKARIM, OO
HENRY, A
MONEMAR, B
LINDSTROM, JL
ZHANG, Y
CORBETT, JW
[J]. PHYSICAL REVIEW B, 1990, 42 (09): : 5635 - 5640
[3] Isotope effects on the optical spectra of semiconductors
Cardona, M
Thewalt, MLW
[J]. REVIEWS OF MODERN PHYSICS, 2005, 77 (04) : 1173 - 1224
[4] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF DIAMOND HEXAGONAL SILICON IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON
CERVA, H
[J]. JOURNAL OF MATERIALS RESEARCH, 1991, 6 (11) : 2324 - 2336
[5] Radiative processes in bulk crystalline silicon
Davies, G
[J]. JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 1 - 7
[6] Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon
Giri, PK
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (06) : 638 - 644
[7] Efficient silicon light-emitting diodes
Green, MA
Zhao, JH
Wang, AH
Reece, PJ
Gal, M
[J]. NATURE, 2001, 412 (6849) : 805 - 808
[8] Direct bandgap measurements in a three-dimensionally macroporous silicon 9R polytype using monochromated transmission electron microscope
Gu, Lin
Yu, Yan
Sigle, Wilfried
Usami, Noritaka
Tsukimoto, Susumu
Maier, Joachim
Ikuhara, Yuichi
van Aken, Peter A.
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (21)
[9] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON
HAYNES, JR
[J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363
[10] JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

← 1 2 3 →