Physical origin of the incubation time of self-induced GaN nanowires

被引：56

作者：

Consonni, V. ^{[1
]}

Trampert, A. ^{[1
]}

Geelhaar, L. ^{[1
]}

Riechert, H. ^{[1
]}

机构：

[1] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 03期

关键词：

SILICON NANOWIRES; CATALYST-FREE; NUCLEATION; GROWTH;

D O I：

10.1063/1.3610964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation process of self-induced GaN nanowires grown by molecular beam epitaxy has been investigated by reflection high-energy electron diffraction measurements. It is found that stable nuclei in the form of spherical cap-shaped islands develop only after an incubation time that is strongly dependent upon the growth conditions. Its evolution with the growth temperature and gallium rate has been described within standard island nucleation theory, revealing a nucleation energy of 4.9 +/- 0.1 eV and a very small nucleus critical size. The consideration of the incubation time is critical for the control of the nanowire morphology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3610964]

引用

页数：3

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