Effect of Top Electrode Materials on the Nonvolatile Resistive Switching Characteristics of CCTO Films

被引：15
作者：
Lin, Chun-Chieh [1 ]
Chang, Yi-Peng [1 ]
Ho, Chia-Cheng [2 ]
Shen, Yu-Shu [3 ]
Chiou, Bi-Shiou [3 ]
机构：
[1] Natl Dong Hwa Univ, Dept Elect Engn, Hualien 974, Taiwan
[2] Taiwan Semicond Mfg Co, R&D Dept, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 03期
关键词：
Electrodes; nonvolatile memory; resistive random access memory; work function; ELECTRICAL-PROPERTIES;
D O I：
10.1109/TMAG.2010.2101584
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel material CaCu3Ti4O12 (CCTO) for resistive random access memory (RRAM) application was prepared by sol-gel spin-coating method. Our previous studies indicated that the CCTO possesses stable resistive switching behavior. In this work, the effects of the top electrode (TE) material on the resistive switching characteristics of CCTO films are investigated. It indicates the work function of the TE is an important factor on the resistive switching properties. Successive resistive switching was observed for electrode materials of Ni, Pd, and Pt. Furthermore, optimized consideration of the electrode material for RRAM is also studied.
引用
收藏
页码：633 / 636
页数：4
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