Fano resonance in electron transport through parallel double quantum dots in the Kondo regime

被引:93
|
作者
Ding, GH [1 ]
Kim, CK
Nahm, K
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Phys, Wonju 220710, South Korea
关键词
D O I
10.1103/PhysRevB.71.205313
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron transport through parallel double quantum dot system with interdot tunneling and strong on-site Coulomb interaction is studied in the Kondo regime by using the finite-U slave boson technique. For a system of quantum dots with degenerate energy levels, the linear conductance reaches the unitary limit (2e(2)/h) due to the Kondo effect at low temperature when interdot tunneling is absent. As the interdot tunneling amplitude increases, the conductance decreases in the singly occupied regime and a conductance plateau structure appears. In the crossover to the doubly occupied regime, the conductance increases to reach a maximum value of G=2e(2)/h. For parallel double dots with different energy levels, we show that the interference effect plays an important role in electron transport. The linear conductance is shown to have an asymmetric line shape of the Fano resonance as a function of gate voltage.
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页数:6
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