Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors

被引:70
|
作者
Hausmann, DM [1 ]
de Rouffignac, P
Smith, A
Gordon, R
Monsma, D
机构
[1] Harvard Univ, Chem Labs, Cambridge, MA 02138 USA
[2] Harvard Univ, Phys Lab, Cambridge, MA 02138 USA
关键词
tantalum oxide; atomic layer deposition; precursors;
D O I
10.1016/S0040-6090(03)00502-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic layer deposition of highly conformal films of tantalum oxide were studied using tantalum alkylamide precursors and water as the oxygen source. These films also exhibited a very high degree of conformality: 100% step coverage on vias with aspect ratios greater than 35. As deposited, the films were free of detectable impurities with the expected (2.5-1) oxygen to metal ratio and were smooth and amorphous. The films were completely uniform in thickness and composition over the length of the reactor used for depositions. Films were deposited at substrate temperatures from 50 to 350 degreesC from precursors that were vaporized at temperatures from 50 to 120 degreesC. As deposited, the films showed a dielectric constant of 28 and breakdown field consistently greater than 4.5 MV/cm. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 50 条
  • [31] Conformal hydrophobic coatings prepared using atomic layer deposition seed layers and non-chlorinated hydrophobic precursors
    Herrmann, CF
    Delrio, FW
    Bright, VM
    George, SM
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (05) : 984 - 992
  • [32] Bismuth precursors for atomic layer deposition of bismuth-containing oxide films
    Vehkamäki, M
    Hatanpää, T
    Ritala, M
    Leskelä, M
    JOURNAL OF MATERIALS CHEMISTRY, 2004, 14 (21) : 3191 - 3197
  • [33] Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone
    Senzaki, Y
    Park, S
    Chatham, H
    Bartholomew, L
    Nieveen, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1175 - 1181
  • [34] Preparation of Tantalum Oxide Thin Films by Atomic Layer Deposition Technique and Their Property Characterization
    Ming S.
    Wen Q.
    Gao Y.
    Yan M.
    Lu W.
    Xia Y.
    Cailiao Daobao/Materials Reports, 2021, 35 (06): : 6042 - 6047
  • [35] Preparation of tantalum oxide thin films by photo-assisted atomic layer deposition
    Kwak, JC
    Lee, YH
    Choi, BH
    APPLIED SURFACE SCIENCE, 2004, 230 (1-4) : 249 - 253
  • [36] Physical properties of highly conformal TiN thin films grown by atomic layer deposition
    Kim, Jaebum
    Hong, Hyunseok
    Ghosh, Subhankar
    Oh, Ki-Young
    Lee, Chongmu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (03): : 1375 - 1379
  • [37] Physical properties of highly Conformal TiN thin films grown by atomic layer deposition
    Kim, J
    Hong, H
    Ghosh, S
    Oh, KY
    Lee, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (03): : 1375 - 1379
  • [38] In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
    Maslar, J. E.
    Kimes, W. A.
    Sperling, B. A.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (09) : 8226 - 8232
  • [39] Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant
    Maeng, W. J.
    Choi, Dong-won
    Park, Jozeph
    Park, Jin-Seong
    CERAMICS INTERNATIONAL, 2015, 41 (09) : 10782 - 10787
  • [40] Atomic Layer Deposition from Dissolved Precursors
    Wu, Yanlin
    Doehler, Dirk
    Barr, Maissa
    Oks, Elina
    Wolf, Marc
    Santinacci, Lionel
    Bachmann, Julien
    NANO LETTERS, 2015, 15 (10) : 6379 - 6385