Determination of dynamic stress intensity factor of C/C-SiC composites

被引:1
|
作者
Mayer, U
Srivastava, VK
Maile, K
机构
[1] Univ Stuttgart, Staatliche Mat Prufungsanstalt, MPA, D-70569 Stuttgart, Germany
[2] Banaras Hindu Univ, Inst Technol, Dept Mech Engn, Varanasi 221005, Uttar Pradesh, India
来源
JOURNAL DE PHYSIQUE IV | 2003年 / 110卷
关键词
D O I
10.1051/jp4:20030781
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper presents a split Hopkinson pressure bar (SHPB) technique to determine the stress intensity factor of unoxidised and oxidised (1600 degreesC for 15 min) carbon-carbon silicon carbide (C/C-SiC) composites with the chevron notched pre-crack length. Only the Split Hopkinson input bar was used. The pressure pulse was used to load a pre-cracked specimen with the reflected tensile pulse from the end of the specimen. The length of the specimen was chosen in such a way that the pressure and tension pulse were separated. After the interpretation of the experimental data's, the dynamic stress intensity factor of each samples were measured. The results show that the dynamic stress intensity factor was affected by the conditioning of C/C-SiC composite specimens. The SEM micrographs were verified the effect of load and conditioning on morphology of C/C-SiC composite materials.
引用
收藏
页码:735 / 740
页数:6
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