Structure formation and electrophysical properties of a silicon carbide boron carbide sintered composite

被引:1
|
作者
Shipilova, LA [1 ]
Petrovskii, VY [1 ]
Chugunova, SI [1 ]
机构
[1] Ukrainian Acad Sci, Inst Sci Mat, Kiev, Ukraine
关键词
Silicon Carbide; Electrophysical Property; Reaction Sinter; Concentration Relationship; Porous Silicon Carbide;
D O I
10.1007/BF02676157
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
[No abstract available]
引用
收藏
页码:652 / 656
页数:5
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