A novel high frequency, high-efficiency, differential class-E power amplifier in 0.18μm CMOS

被引:0
|
作者
Heydari, P [1 ]
Zhang, Y [1 ]
机构
[1] Univ Calif Irvine, Dept EECS, Irvine, CA 92697 USA
关键词
radio-frequency integrated circuits; class-E power amplifier; injection-locked; oscillator; phase noise; jitter;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents the design of a high efficiency, low THD, 5.7GHz fully differential power amplifier for wireless communications in a standard 0.18mum CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. In order to achieve high operating frequency, an injection-locked oscillator is utilized, which makes the output voltage of the power amplifier tuned at the input signal frequency. A complementary CMOS cross-coupled pair topology is employed to realize the LC-tank oscillator because it has lower phase-noise, thereby giving lower THD than the single NMOS cross-coupled pair topology. The proposed power amplifier can deliver 25dBm output power to a 500 load at 5.7GHz with 42.6% power-added efficiency (PAE) from 1.8V supply voltage.
引用
收藏
页码:455 / 458
页数:4
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