Kinetic processes in GaAs crystals at high electric field under laser radiation

The effect of laser radial-lion on the field emission current from high resistance GaAs crystals has been studied for the steady operation mode of the field emitter and under pulsed conditions. A novel technique for the optical and emission studies lis developed, including the change in the laser radiation intensity following the emitting surface. The IN characteristics and the oscillogram patterns under the above mentioned conditions are discussed. A physical model which describes the field emission current. from a p-type semiconductor crystal and its features under illumination is discussed.