Study on the phase transition dynamics of HfO2-based ferroelectric films under ultrafast electric pulse

被引:12
|
作者
Lai, Bin [1 ,2 ]
Wang, Yuanyao [1 ,2 ]
Shao, Yanping [1 ,2 ]
Deng, Yuhui [1 ,2 ]
Yang, Wanting [1 ,2 ]
Jiang, Limei [1 ,2 ]
Zhang, Yuke [1 ,2 ]
机构
[1] Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China
[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
ultrafast electrical pulse; hafnium oxide-based ferroelectric thin films; multiphase coexistence phase field dynamic model; phase transition; FIELD SIMULATIONS; THIN-FILMS; BEHAVIOR; HFO2;
D O I
10.1088/1361-648X/ac14f9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Wake-up effect and fatigue in HfO2-based ferroelectric films are closely related to the phase transition dynamics of the film subjected to ultrafast electric pulses. Here, we establish a multiphase coexistence phase field dynamics model for HfO2-based ferroelectric films in the ultrafast time scale and study the effects of the amplitude, width and frequency of the electric pulse on the phase transition dynamics. Based on the simulation results, we obtain the analytical equation of the volume fraction of switched c-domains under low fields as a function of pulse duration. And we found that monoclinic phase can transform into ferroelectric c-domains under high amplitude electric field (E > 2.8 MV cm(-1)). The electric pulse duration affects the film's retention properties. When the duration of the electric pulse is less than 1.2 ns or longer than 1.8 ns, the ferroelectric c-domains will respectively invert into other phases or increase cumulatively after removing the electric field. The frequency of cyclic pulse is related to the degree of wake up effect. The lower the pulse frequency is, the more obvious the 'wake up' effect is.
引用
收藏
页数:10
相关论文
共 50 条
  • [41] Effect of Ferroelectric Thickness Variation in Undoped HfO2-Based Negative-Capacitance Field-Effect Transistor
    Awadhiya, Bhaskar
    Kondekar, Pravin N.
    Meshram, Ashvinee Deo
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (10) : 6762 - 6770
  • [42] Phase Transition and Magnetoelectric Effect in 2D Ferromagnetic Films on a Ferroelectric Substrate
    Bychkov, Igor
    Belim, Sergey
    Maltsev, Ivan
    Shavrov, Vladimir
    COATINGS, 2021, 11 (11)
  • [43] Origin of the Endurance Degradation in the Novel HfO2-based 1T Ferroelectric Non-Volatile Memories
    Yurchuk, Ekaterina
    Mueller, Stefan
    Martin, Dominik
    Slesazeck, Stefan
    Schroeder, Uwe
    Mikolajick, Thomas
    Mueller, Johannes
    Paul, Jan
    Hoffmann, Raik
    Sundqvist, Jonas
    Schloesser, Till
    Boschke, Roman
    van Bentum, Ralf
    Trentzsch, Martin
    2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [44] Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement
    Mizutani, Kazuto
    Hoshii, Takuya
    Wakabayashi, Hitoshi
    Tsutsui, Kazuo
    Chang, Edward Y.
    Kakushima, Kuniyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (02)
  • [45] Ultrafast Nanoimaging of the Photoinduced Phase Transition Dynamics in VO2
    Donges, Sven A.
    Khatib, Omar
    O'Callahan, Brian T.
    Atkin, Joanna M.
    Park, Jae Hyung
    Cobden, David
    Raschke, Markus B.
    NANO LETTERS, 2016, 16 (05) : 3029 - 3035
  • [46] Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films
    Shen, Zhi
    Liao, Lei
    Zhou, Yong
    Xiong, Ke
    Zeng, Jinhua
    Wang, Xudong
    Chen, Yan
    Liu, Jingjing
    Guo, Tianle
    Zhang, Shukui
    Lin, Tie
    Shen, Hong
    Meng, Xiangjian
    Wang, Yiwei
    Cheng, Yan
    Yang, Jing
    Chen, Pan
    Wang, Lifen
    Bai, Xuedong
    Chu, Junhao
    Wang, Jianlu
    APPLIED PHYSICS LETTERS, 2022, 120 (16)
  • [47] Improved Endurance of HfO2-Based Metal-Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing
    Oh, Seungyeol
    Song, Jeonghwan
    Yoo, In Kyeong
    Hwang, Hyunsang
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (07) : 1092 - 1095
  • [48] Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films
    Petraru, Adrian
    Gronenberg, Ole
    Schu''rmann, Ulrich
    Kienle, Lorenz
    Droopad, Ravi
    Kohlstedt, Hermann
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (32) : 42534 - 42545
  • [49] Sublayer thickness dependence of nanolaminated HfO2-Al2O3 films for ferroelectric phase stabilization
    Lee, Jehoon
    Eom, Deokjoon
    Lee, Changmin
    Lee, Woohui
    Oh, Joohee
    Park, Changyu
    Kim, Jinyong
    Lee, Hyangsook
    Lee, Sangjun
    Lee, Eunha
    Kim, Hyoungsub
    APPLIED PHYSICS LETTERS, 2022, 120 (22)
  • [50] Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films
    Mimura, Takanori
    Shimizu, Takao
    Uchida, Hiroshi
    Sakata, Osami
    Funakubo, Hiroshi
    APPLIED PHYSICS LETTERS, 2018, 113 (10)