High Curie temperature in halfmetallic ferromagnets (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te for spintronic devices: Ab initio and Monte Carlo treatments

被引：12
作者：
Bouziani, I [1 ]
Benhouria, Y. [1 ]
Essaoudi, I [1 ,3 ]
Ainane, A. [1 ,2 ,3 ]
Ahuja, R. [3 ]
机构：
[1] Univ Moulay Ismail, Fac Sci, Phys Dept, Unite Associee,CNRST,URAC 08,LP2MS, BP 11201, Meknes, Morocco
[2] Max Planck Inst Phys Complexer Syst, Nothnitzer Str 38, D-01187 Dresden, Germany
[3] Uppsala Univ, Dept Phys & Astron, Condensed Matter Theory Grp, S-75120 Uppsala, Sweden
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2020年 / 253卷
关键词：
Spintronic; Diluted magnetic semiconductors; Zn-VI; Ab-initio calculations; Monte Carlo method; High Curie temperature; HALF-METALLIC FERROMAGNETISM; MAGNETOELECTRONIC PROPERTIES; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; ZNSE; APPROXIMATION; IMPURITIES; ZNTE;
D O I：
10.1016/j.mseb.2019.114484
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current study is purposed to investigate the magnetic- and electronic-properties of Zn1-2xCrxTixSe and Zn1-2xCrxTixTe systems by means of Ab initio and Monte Carlo calculations. We have predicted that the two systems show ferromagnetic halfmetallic behavior with 100% spin polarization at the Fermi level and their ferromagnetic stability is attributed to the double exchange coupling. Our calculations suggest further that these compounds exhibit a 2nd order ferromagnetic transition with high Curie temperature. Thus, (Zn, Cr, Ti)Se and (Zn, Cr, Ti)Te compounds are strong candidates for spintronic devices, especially for magnetic random access memories (MRAM) based on the spin transfer torque.
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页数：6
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