Single-photon emission by semiconductor quantum rings in a photonic crystal

被引：11

作者：

Gallardo, E. ^{[1
]}

Martinez, L. J. ^{[2
]}

Nowak, A. K. ^{[1
]}

Sarkar, D. ^{[1
]}

Sanvitto, D. ^{[1
]}

van der Meulen, H. P. ^{[1
]}

Calleja, J. M. ^{[1
]}

Prieto, I. ^{[2
]}

Granados, D. ^{[2
]}

Taboada, A. G. ^{[2
]}

Garcia, J. M. ^{[2
]}

Postigo, P. A. ^{[2
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

[2] CSIC, Ctr Nacl Microelect, Inst Microelect Madrid, E-28760 Madrid, Spain

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 2010年 / 27卷 / 06期

关键词：

DOT;

D O I：

10.1364/JOSAB.27.000A21

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photon correlation measurements on single InAs/GaAs quantum rings embedded in a photonic crystal lattice demonstrate single-photon emission with g((2))(0) values of 0.4 and photon antibunching between the exciton and biexciton emissions. The measured photon antibunching times of the excitons are longer than that of the biexcitons, resulting in the time asymmetry of the exciton-biexciton photon cross-correlation. Phonon side-bands due to the piezoelectric coupling of excitons to acoustic phonons broaden the emission lines and shift them to lower energies at low excitation intensity. (C) 2010 Optical Society of America

引用

页码：A21 / A24

页数：4

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