Phonons and related crystal properties in indium phosphide under pressure

被引：74
|
作者：
Bouarissa, Nadir [1 ]
机构：
[1] King Khalid Univ, Fac Sci, Sci & Technol Unit, Dept Phys, Abha, Saudi Arabia
来源：
PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 13期
关键词：
Phonon frequencies; Polarons in lattices; Collective effects; Pressure; InP; DIAMOND ANVIL CELL; III-V; COMPOUND SEMICONDUCTORS; TEMPERATURE-DEPENDENCE; HYDROSTATIC-PRESSURE; DEVICE APPLICATIONS; REFRACTIVE-INDEXES; MOLECULAR-DYNAMICS; OPTICAL-PROPERTIES; EFFECTIVE CHARGES;
D O I：
10.1016/j.physb.2011.03.073
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Based on the pseudopotential approach, the lattice vibration and polaron properties in InP under pressure up to 8 GPa have been investigated. At zero pressure, our calculated values for all features of interest are in reasonable agreement with data available in literature. Upon compression, the optical phonon modes at Gamma point in the Brillouin zone are shifted towards high energies and their frequencies display a blueshift with rising pressure. The splitting of the longitudinal and transverse optical phonons narrows under pressure, indicating thus a decrease of the ionicity of InP crystal with pressure. It is observed that all physical quantities being studied in this contribution behave monotonically upon compression. To the best of the author's knowledge, the pressure dependence of the polaron properties for InP in the present study is reported for the first time. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2583 / 2587
页数：5
相关论文
共 50 条
  • [21] Electronic structure and optical properties of α-RDX crystal under pressure from first-principles calculations
    Cheng, Heping
    Huang, Zhimeng
    Chen, Tunan
    MOLECULAR PHYSICS, 2016, 114 (12) : 1931 - 1938
  • [22] Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide
    Mittova, I. Ya
    Kostryukov, V. F.
    Ilyasova, N. A.
    Sladkopevtsev, B., V
    Samsonov, A. A.
    NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS, 2020, 11 (01): : 110 - 116
  • [23] Layered Indium Selenide under High Pressure: A Review
    Segura, Alfredo
    CRYSTALS, 2018, 8 (05):
  • [24] Equation of state of liquid Indium under high pressure
    Li, Huaming
    Sun, Yongli
    Li, Mo
    AIP ADVANCES, 2015, 5 (09):
  • [25] Band-edge absorption characteristics of semi-insulating indium phosphide under unified Franz-Keldysh and Einstein models
    MacGillivray, Alexander C.
    Lesack, Nikolai I.
    Hristovski, Ilija R.
    Jenne, Matthias F.
    Maglio, Benjamin C.
    Gorgani, Sayra
    Holzman, Jonathan F.
    PHYSICAL REVIEW B, 2022, 105 (15)
  • [26] High pressure induced phase transition in sulfur doped indium phosphide: An angular-dispersive X-ray diffraction and Raman study
    Lin, Chih-Ming
    Sheu, Hwo-Shuenn
    Tsai, Min-Hsiung
    Wu, Bi-Ru
    Jian, Sheng-Rui
    SOLID STATE COMMUNICATIONS, 2009, 149 (3-4) : 136 - 141
  • [27] Predicting Indium Phosphide Quantum Dot Properties from Synthetic Procedures Using Machine Learning
    Nguyen, Hao A.
    Dou, Florence Y.
    Park, Nayon
    Wu, Shenwei
    Sarsito, Harrison
    Diakubama, Benedicte
    Larson, Helen
    Nishiwaki, Emily
    Homer, Micaela
    Cash, Melanie
    Cossairt, Brandi M.
    CHEMISTRY OF MATERIALS, 2022, 34 (14) : 6296 - 6311
  • [28] Under pressure: Control of strain, phonons and bandgap opening in rippled graphene
    Monteverde, U.
    Pal, J.
    Migliorato, M. A.
    Missous, M.
    Bangert, U.
    Zan, R.
    Kashtiban, R.
    Powell, D.
    CARBON, 2015, 91 : 266 - 274
  • [29] Metal organic chemical vapor deposition of indium phosphide nanoneedles on non-single crystal silicon surfaces
    Kobayashi, Nobuhiko P.
    Wang, Shih-Yuan
    Santori, Charles
    Williams, R. Stanley
    NANOMATERIAL SYNTHESIS AND INTEGRATION FOR SENSORS, ELECTRONICS, PHOTONICS, AND ELECTRO-OPTICS, 2006, 6370
  • [30] Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator
    Li, Jie
    Xue, Ying
    Xu, Ke
    Xing, Zengshan
    Wong, Kam Sing
    Lau, Kei May
    APL MATERIALS, 2024, 12 (11):
12345