Analysis of size effect in PZT thin film capacitors

被引：1
|
作者：
Bouregba, R. [1 ]
Le Rhun, G. [1 ]
Poullain, G. [1 ]
Leclerc, G. [1 ]
机构：
[1] Lab CRISMAT ENSICAEN, CNRS, UMR 6508, F-14050 Caen, France
来源：
2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/ISAF.2007.4393302
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ferroelectric properties of Pt/PZT/Pt/TiO2/SiO2/Si thin film capacitors with different thicknesses are investigated. The degradation of the switching properties is fully reproduced by simulations including non ferroelectric space charge layers at both ferroelectric/electrode interfaces. Size effect is shown to arise from a mechanism of modulation of density and sign of the space charge.
引用
收藏
页码：472 / 475
页数：4
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