High performance of rubrene thin film transistor by weak epitaxy growth method

被引：38

作者：

Chang, Hao ^{[1
,2
]}

Li, Weili ^{[1
]}

Tian, Hongkun ^{[1
]}

Geng, Yanhou ^{[1
]}

Wang, Haibo ^{[1
]}

Yan, Donghang ^{[1
]}

Wang, Tong ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

ORGANIC ELECTRONICS | 2015年 / 20卷

基金：

中国国家自然科学基金;

关键词：

Weak epitaxy growth; Rubrene; Organic film; Single orientation; Organic transistor performance; HIGH-MOBILITY; ORGANIC SEMICONDUCTORS; LAYER; PHTHALOCYANINE; MONOLAYER; CRYSTALS; SINGLE;

D O I：

10.1016/j.orgel.2015.02.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rubrene single-crystal transistors have achieved one of the highest carrier mobilities in organic semiconductors. However its thin film transistor usually shows inferior performance due to the poor film quality. Therefore how to obtain large-area and high quality rubrene thin film has become a prominent challenge. This work utilized weak epitaxy growth method with new inducing layer 1,3-di( terphenyl) benzene (m-7P), and lager-area highly ordered terrace rubrene film was obtained. Based on this high quality film, the hole mobility of rubrene polycrystalline thin film transistor has been enhanced to 11.6 cm(2) V-1 s(-1) with VOPc as buffer layer between semiconductor layer and electrodes. This high device performance was attributed to the flat inducing layer and the single orientation of rubrene domains on m-7P layer, which may reduce grain boundaries and improve the film quality. This easy process to prepare large-area high performance rubrene device supplies a good opportunity for large-area electronic device manufacture. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：43 / 48

页数：6

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