Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures

被引：22

作者：

Schoeche, S. ^{[1
,2
]}

Shi, Junxia ^{[3
]}

Boosalis, A. ^{[1
,2
]}

Kuehne, P. ^{[1
,2
]}

Herzinger, C. M. ^{[4
]}

Woollam, J. A. ^{[4
]}

Schaff, W. J. ^{[3
]}

Eastman, L. F. ^{[3
]}

Schubert, M. ^{[1
,2
]}

Hofmann, T. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

[4] JA Woollam Co Inc, Lincoln, NE 68508 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期

基金：

美国国家科学基金会;

关键词：

FREE-CARRIER; ELLIPSOMETRY;

D O I：

10.1063/1.3556617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640 GHz to 1 THz in a AlGaN/GaN heterostructure using the optical-Hall effect at room temperature. Complementary midinfrared spectroscopic ellipsometry measurements are performed for analysis of heterostructure constituents layer thickness, phonon mode, and free-charge carrier parameters. The electron effective mass is determined to be (0.22 +/- 0.04)m(0). The high-frequency sheet density and carrier mobility parameters are in good agreement with results from dc electrical Hall effect measurements, indicative for frequency-independent carrier scattering mechanisms of the two-dimensional carrier distribution. (C) 2011 American Institute of Physics. [doi:10.1063/1.3556617]

引用

页数：3

共 23 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Ambacher, O
Smart, J
Shealy, JR
Weimann, NG
Chu, K
Murphy, M
Schaff, WJ
Eastman, LF
Dimitrov, R
Wittmer, L
Stutzmann, M
Rieger, W
Hilsenbeck, J
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3222 - 3233
[2] Undoped AlGaN/GaN HEMTs for microwave power amplification
Eastman, LF
Tilak, V
Smart, J
Green, BM
Chumbes, EM
Dimitrov, R
Kim, H
Ambacher, OS
Weimann, N
Prunty, T
Murphy, M
Schaff, WJ
Shealy, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) : 479 - 485
[3] Fujiwara H., 2009, SPECTROSCOPIC ELLIPS
[4] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
Green, BM
Chu, KK
Chumbes, EM
Smart, JA
Shealy, JR
Eastman, LF
[J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) : 268 - 270
[5] The optical Hall effect
Hofmann, T.
Herzinger, C. M.
Krahmer, C.
Streubel, K.
Schubert, M.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (04): : 779 - 783
[6] Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry
Hofmann, T.
Boosalis, A.
Kuehne, P.
Herzinger, C. M.
Woollam, J. A.
Gaskill, D. K.
Tedesco, J. L.
Schubert, M.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (04)
[7] Variable-wavelength frequency-domain terahertz ellipsometry
Hofmann, T.
Herzinger, C. M.
Boosalis, A.
Tiwald, T. E.
Woollam, J. A.
Schubert, M.
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (02)
[8] HOFMANN T, THIN SOLID IN PRESS
[9] Terahertz time domain magneto-optical ellipsometry in reflection geometry
Ino, Y
Shimano, R
Svirko, Y
Kuwata-Gonokami, M
[J]. PHYSICAL REVIEW B, 2004, 70 (15) : 155101 - 1
[10] Jellison GE, 1998, THIN SOLID FILMS, V313, P33, DOI 10.1016/S0040-6090(97)00765-7

← 1 2 3 →