1.58 μm InGaAs quantum well laser on GaAs

被引：52

作者：

Tangring, I. ^{[1
]}

Ni, H. Q.

Wu, B. P.

Wu, D. H.

Xiong, Y. H.

Huang, S. S.

Niu, Z. C.

Wang, S. M.

Lai, Z. H.

Larsson, A.

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期

关键词：

D O I：

10.1063/1.2803756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.

引用

页数：3

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