Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

被引：2

作者：

Bhattachar-yya, D ^{[1
]}

Vinokurov, DA

Gusinskii, GM

Elyukhin, VA

Kovalenkov, OV

Kyutt, RN

Marsh, JH

Naidenov, VO

Portnoi, EL

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[2] Univ Glasgow, Glasgow G12 8QQ, Lanark, Scotland

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 09期

关键词：

Nitrogen; Solid Solution; Photoluminescence Spectrum; Semiconductor Structure;

D O I：

10.1134/1.1262246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 10(11)-5 x 10(12) cm(-2) shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks. (C) 1998 American Institute of Physics.

引用

页码：690 / 691

页数：2

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[2]

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