Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array

被引：6

作者：

Khabir, Mehdi ^{[1
]}

Alaibakhsh, Hamzeh ^{[1
]}

Karami, Mohammad Azim ^{[1
]}

机构：

[1] Univ Sci & Technol Iran, Sch Elect Engn, Univ St,Hengam St,Resalat Sq, Tehran 1311416846, Iran

来源：

APPLIED OPTICS | 2021年 / 60卷 / 31期

关键词：

DEEP-TRENCH ISOLATION; PIXEL; MODEL; CCD;

D O I：

10.1364/AO.431366

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, a complete investigation and 2D simulation of electrical crosstalk in a setup with three neighboring pinned photodiode complementary metal-oxide-semiconductor (CMOS) image sensor pixels are performed. Electrical crosstalk characterization as a function of pixel size and epitaxial layer doping concentration is presented. The simulation results in constant epitaxial layer doping concentration show that the ratio of external quantum efficiency to electrical crosstalk is linear with respect to pixel size. In the pixel size of 3.7 mu m, the turning point in the correlation trend between external quantum efficiency and electrical crosstalk from a small pixel size to a large one occurs. In addition, the simulation results showthe optimal values of external quantum efficiency and electrical crosstalk occurs at 1 x 10(14) (cm(3)) in a constant pixel size. Moreover, the ratio of external quantum efficiency to the electrical crosstalk decreases linearly with respect to the epitaxial layer doping considering above 1 x 10(14) (cm(3)). (C) 2021 Optical Society of America

引用

页码：9640 / 9650

页数：11

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