Ab initio impact ionization rate in GaAs, GaN, and ZnS -: art. no. 085201

被引：12

作者：

Kuligk, A ^{[1
]}

Fitzer, N ^{[1
]}

Redmer, R ^{[1
]}

机构：

[1] Univ Rostock, Inst Phys, D-18051 Rostock, Germany

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.71.085201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed extensive ab initio band structure calculations within density functional theory using an exact exchange formalism with a local density approximation for correlations. The wave-vector-dependent impact ionization rate is determined for GaAs, GaN, and ZnS. A strong asymmetry of the microscopic scattering rate as well as a pronounced influence of the band structure is found. We present also energy-averaged impact ionization rates which can be used in ensemble Monte Carlo simulations of high-field electron transport in these materials.

引用

页数：6

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